| 1. | Charge carrier density gradient
电荷载流子密度梯度 |
| 2. | As a result , we can obtain p - type zno thin films with a high carrier density
为制备p - zno提供了一种新的思路和方法。 |
| 3. | Distributions of electric field and carrier densities in single layer light emitting diodes
单层有机发光二极管中电场与载流子密度的分布 |
| 4. | Using this expression , the interrelation of the carrier density in each segment and the emission wavelength can be predicted while the laser is lasing
该表达式可以用来预测激光器激射工作时，两段载流子浓度和激射波长之间的相互关系。 |
| 5. | The power dissipation of 4h - sic mps was calculated . the influences of temperature on sic mobility , ionization rate and intrinsic carriers density were taken into account
建立了4h - sicmps的功率损耗的解析模型并对其功率损耗特性进行了计算。 |
| 6. | 3 the carrier transportation and transition in led active layer had been analyzed . the larger number of quantum wells are in active layer , the lower carrier density will be , and the better confinement of carrier is
) y方向上的有效质量减小，而轻空穴则具有负的有效质量，这对器件电注入和光辐射复合是有利的。 |
| 7. | 6 the zn3n2 is prepared on focus glass substrate at low temperature . and for the first time , a p - zno with a carrier density of 1017 ? cm - 3 is obtained by thermal zn3n2 in an oxygen ambient
5 、用等离子体增强的化学汽相沉积的方法制备了zn3n2薄膜，首次通过热氧化zn3n2的方法，制备出了受主型载流子浓度为1017cm - 3的p - zno薄膜。 |
| 8. | In this paper , the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation , thus the carrier effective mass and scattering rate can be obtained . furthermore , taking account for the carrier density in each subband , we establish carrier mobility model in strained - si mosfet
本文通过求解自洽薛定谔方程,确定了应变硅mosfet反型层的子能带结构,在此基础上经进一步计算得到子能带内载流子的有效质量和散射几率,综合考虑各子能带上的载流子的浓度分布,建立了应变硅mosfet载流子迁移率的解析模型。 |
| 9. | On the basis of this , the effective reflective index with the variation of the carrier density is discussed . this paper also analyzed the random facet phase and the length of the cavity ' s influence on threshold characteristic . especially , the wavelength tuning characteristics have been investigated in detail when one segment works as absorbed region
在此基础上，研究了每一段等效反射率谱曲线随载流子浓度变化的情况；分析了边界相位的不确定性以及激光器腔长对阈值特性的影响；重点讨论了其中一段工作在吸收状态下的波长调谐性质。 |
| 10. | The equivalent cavity model is used to deduce the threshold condition of the ecld , and the expression of the threshold carrier density n ( v ) when ecld is tuned to oscillate at different frequencies has been obtained . using the expression of n ( v ) and the carrier dependent refractive index , the simple basic equation describing the bistable characteristics has been derived after choosing an appropriate reference frequency nf
通过建立等效腔模型来推导外腔半导体激光器的阈值条件，得到ecld在不同频率v振荡所需的阈值载流子密度n ( v )表达式，利用该表达式及相关的折射率表达式，在选择合适的参考载流子密度n _ f后，导出了一个描述双稳所需的基本方程。 |
